An atomistic quantum transport solver with dephasing for field-effect transistors

Journal of Computational Electronics

Volumn 7, Issue 3, 2008, Pages 423-426

  Raza, Hassan ^a   Kan, Edwin C ^a  

^a Cornell University   (United States)

Author keywords

C60; CNT cross bar; EHT; Elastic and inelastic dephasing; NDR; NEGF

Indexed keywords

BORN APPROXIMATION; CARBON NANOTUBES; DIFFERENTIAL EQUATIONS; DISSOCIATION; ELECTROSTATICS; FIELD EFFECT TRANSISTORS; GREEN'S FUNCTION; PHOTORESISTS; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; SINGLE-WALLED CARBON NANOTUBES (SWCN); SURFACE ROUGHNESS; TRANSISTORS;

C60; CNT CROSS-BAR; EHT; ELASTIC AND INELASTIC DEPHASING; NDR; NEGF;

THREE DIMENSIONAL;

DIFFERENTIAL EQUATIONS; DISSOCIATION; ELECTROSTATICS; PROBLEM SOLVING; QUANTUM CHEMISTRY; ROUGHNESS; THREE DIMENSIONAL DESIGN; TRANSISTORS;

EID: 50949085894     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-008-0231-5     Document Type: Article

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