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Volumn 354, Issue 35-39, 2008, Pages 4238-4241
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Electrical and optical properties of bismuth telluride/gallium nitride heterojunction diodes
a
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Author keywords
[No Author keywords available]
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Indexed keywords
BISMUTH;
CORUNDUM;
FILM GROWTH;
GALLIUM ALLOYS;
GALLIUM COMPOUNDS;
GALLIUM NITRIDE;
IMAGING TECHNIQUES;
MOLECULAR ORBITALS;
MOLECULAR SPECTROSCOPY;
NITRIDES;
OPTICAL PROPERTIES;
PHOTOELECTRON SPECTROSCOPY;
PULSED LASER APPLICATIONS;
PULSED LASER DEPOSITION;
SEMICONDUCTING CADMIUM TELLURIDE;
SEMICONDUCTING GALLIUM;
SEMICONDUCTOR DIODES;
THICK FILMS;
THIN FILMS;
AS-DEPOSITED;
BAND-GAP ENERGIES;
BISMUTH TELLURIDE THIN FILMS;
BISMUTH TELLURIDES;
CHEMICAL COMPOSITIONS;
ELECTRICAL AND OPTICAL PROPERTIES;
HETEROJUNCTION DIODES;
ROOM TEMPERATURES;
STRUCTURAL CHARACTERISTICS;
SUBSTRATE TEMPERATURE;
X-RAY DIFFRACTION;
X RAY PHOTOELECTRON SPECTROSCOPY;
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EID: 50649109187
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2008.06.098 Document Type: Article |
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Times cited : (11)
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References (10)
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