The determination of the average compositions of amorphous interlayers in the V/Si system using a buried ultrathin oxide layer and a capping Mo layer to define the reference planes for interdiffusion

Applied Surface Science

Volumn 92, Issue , 1996, Pages 340-344

  Lin, J H ^a   Chen, L J ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION; DEPOSITION; DIFFUSION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MOLYBDENUM; OXIDES; SILICON; ULTRATHIN FILMS; VACUUM APPLICATIONS; VANADIUM;

AMORPHOUS INTERLAYERS; CAPPING LAYER; INTERDIFFUSION; ULTRAHIGH VACUUM DEPOSITION;

AMORPHOUS FILMS;

EID: 0030562521     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(95)00252-9     Document Type: Article

References (11)

1. W.L. Johnson, Progr. Mater. Sci. 30 (1988) 81.
2. J.R. Abelson, K.B. Kim, D.E. Mercer, C.R. Helms, R. Sinclair and T.W. Sigmon, J. Appl. Phys. 63 (1988) 689.
3. W. Lur and L.J. Chen, Appl. Phys. Lett. 54 (1989) 1219.
4. J.Y. Cheng and L.J. Chen, J. Appl. Phys. 68 (1990) 4002.
5. J.Y. Cheng and L.J. Chen, J. Appl. Phys. 69 (1991) 2161.
6. M.H. Wang and L.J. Chen, J. Appl. Phys. 71 (1992) 5918.
7. W.Y. Hsieh, J.H. Lin and L.J. Chen, Appl. Phys. Lett. 62 (1993) 1088.
8. T.L. Lee and L.J. Chen, J. Appl. Phys. 73 (1993) 8528.
9. Y. Yamauchi, S. Zaima, K. Mizuno, H. Kitamura, Y. Koide and Y. Yasuda, J. Appl. Phys. 69 (1991) 7050.
10. H.R. Liauh, M.C. Chen, J.F. Chen and L.J. Chen, J. Appl. Phys. 74 (1993) 2590.
11. W.Y. Hsieh, J.H. Lin, J.F. Chen, J.M. Liang, C.H. Luo and L.J. Chen, unpublished work.