Robust 45-nm node Cu/ULK interconnects nsing effective porogen control

2006 International Interconnect Technology Conference, IITC

Volumn , Issue , 2006, Pages 207-209

  Kagawa, Y ^a   Enomoto, Y ^a   Shimayaitia, T ^a   Kameshima, T ^a   Okamoto, M ^a   Kawashima, H ^a   Yamada, A ^a   Hasegawa, T ^a   Akiyama, K ^b   Masuda, H ^b   Miyajinia, H ^b   Shibata, H ^b   Kadomura, S ^a  

^a SONY CORPORATION   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; CURING; DIELECTRIC MATERIALS; DRYING; ELECTRON BEAMS; ELECTRON OPTICS; NANOTECHNOLOGY; OPTICAL INTERCONNECTS; PARTICLE BEAMS; TECHNOLOGY;

BACKBONE STRUCTURE; CU INTERCONNECTS; DAMAGE RESISTANCE; ELECTRON-BEAM; HYBRID DUAL DAMASCENE; INTEGRATION METHODS; INTER LAYER DIELECTRIC; INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE; POLYARYLENE; POROGEN; TRENCH ETCHING; ULTRA LOW-K;

ELECTRON BEAM LITHOGRAPHY;

EID: 50249182388     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2006.1648689     Document Type: Conference Paper

References (8)

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5. W. Engbrecht et al., ADMETA Proc. (2005) appendix p. 2
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7. R. Kanamura et al., Symp. on VLSI Tech. (2003) p. 107
8. S. Takashima et al., Dry Process International Symp. Proc. (2005) p. 31