2T-FN eNVM with 90 nm logic process for smart card

2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD

Volumn , Issue , 2008, Pages 26-27

  Yong, Kyu Lee ^a   Jung, Ho Moon ^a   Young, Ho Kim ^a   Chun, Myung Jo ^a   Ha, Soung Youb ^a   Choi, Sunggon ^a   Yoo, Hyunkye ^a   Jeon, Heeseog ^a   Yu, Jaemin ^a   Han, Jeong Uk ^a   Jung, Eunseung ^a   Chung, Chilhee ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

2T (2 transistor); eNVM; Flash; Smart card; SOC

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; OPTICAL DESIGN; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR STORAGE; TECHNOLOGY;

2T (2 TRANSISTOR); 90 NM TECHNOLOGY; CHANNEL WIDTH; CURRENT PERFORMANCE; ENVM; FABRICATED DEVICES; FLASH; FLASH CELLS; INTERNATIONAL CONFERENCES; LOGIC PROCESSES; MEMORY TECHNOLOGY; NON-VOLATILE; RETENTION CHARACTERISTICS; SEMICONDUCTOR MEMORIES; SMART CARD; SOC; SOC APPLICATIONS; TUNNEL OXIDE];

DATA STORAGE EQUIPMENT;

EID: 50249176020     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVSMW.2008.13     Document Type: Conference Paper

References (4)

1. Hung-Cheng Sung et. al., IEEE Electron Device Letters, vol.26, pp.194-196, 2005
2. G. Tao et. al.,. Microelectronic Engineering. vol.72, pp.415, 2004
3. M. van Duuren et. al.,. IEEE Non-Volatile Semiconductor Memory Workshop (NVSMW)., pp.48, 2006
4. H. M. Lee et. al., IEEE Non-Volatile Semiconductor Memory Workshop (NVSMW)., pp.15-16, 2006