Electrically pumped Ge laser at room temperature

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 659-662

  Cheng, T H ^a   Kuo, P S ^a   Lee, C T ^a   Liao, M H ^a   Hung, T A ^a   Liu, C W ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ADMINISTRATIVE DATA PROCESSING; CURVE FITTING; ELECTRON DEVICES; FABRY-PEROT INTERFEROMETERS; GERMANIUM; LASERS; METAL INSULATOR BOUNDARIES; METALS; MIS DEVICES; PHOTONICS; PUMPING (LASER); SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR LASERS; SILICON; SPONTANEOUS EMISSION; STEREOCHEMISTRY; SWITCHING CIRCUITS;

CURRENT INJECTIONS; DIRECTIVITY; ELECTRICALLY PUMPED; EMISSION ENERGIES; EMISSION SPECTRUMS; FABRY-PEROT CAVITIES; FAR-FIELD PATTERNS; LASER DIODE; LASING CHARACTERISTICS; LASING WAVELENGTHS; METAL-INSULATOR-SEMICONDUCTOR; NARROW-LINE WIDTH; POPULATION INVERSIONS; ROOM TEMPERATURES; SI BAND GAP; SPONTANEOUS EMISSION SPECTRUM; THRESHOLD CURRENTS; TRANSVERSE ELECTRICAL;

EMISSION SPECTROSCOPY;

EID: 50249169357     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419030     Document Type: Conference Paper

References (6)

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3. C. W. Liu et al. "Light Emission and Detection by Metal Oxide Silicon Tunneling Diodes," EEE EDM 1999, Technical Digest, pp. 749-752 (1999).
4. M. H. Liao et al. "2 μm emission from Si/Ge heterojunction LED and up to 1.55 μm detection by GOI detector with strain-enhanced features," EEE EDM2005, Technical Digest, pp. 1023-1026 (2005).
5. Werner Weber, "Adiabatic bond charge model for the phonons in diamond, Si, Ge, and α-Sn," Phys. Rev. B 15, 4789-4803 (1977)
6. K. R. Farmer, C. T. Rogers, and R. A. Buhrman, " Localized-State Interactions in Metal-Oxide- Semiconductor Tunnel Diodes," Phys. Rev. Lett., 58, 2255 (1987)