Analytical model for multi-junction solar cells prediction in space environment

Microelectronics Reliability

Volumn 48, Issue 8-9, 2008, Pages 1494-1499

  Gauffier, A ^a   David, J P ^a   Gilard, O ^b  

^a ONERA   (France)

^b CNES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; DEGRADATION; DIRECT ENERGY CONVERSION; FORECASTING; PHOTOVOLTAIC CELLS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SOLAR CELLS; SOLAR ENERGY; SOLAR EQUIPMENT; SULFATE MINERALS;

ANALYTICAL MODELLING; MULTI-JUNCTION SOLAR CELLS; PARTICLE IRRADIATION; PHYSICAL PROPERTIES; SPACE ENVIRONMENTS;

SEMICONDUCTOR JUNCTIONS;

EID: 50249160568     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.07.049     Document Type: Article

References (20)

1. Messenger S.R., Summers G.P., Burke E.A., Walters R.J., and Xapsos M.A. Modeling solar cell degradation in space: a comparison of the NRL displacement damage dose and the JPL equivalent fluence approaches. Progress in photovoltaics: research and applications (2001), John Wiley & Sons p. 103-21
2. Zazoui M., Mbarki M., Aldin A., Bourgoin J.C., Gilard O., and Strobl G. Analysis of multi-junction solar cell in space and irradiation induced recombination centers. J Appl Phys 93 9 (2003) 5080-5084
3. Fahrenbruch A.L., and Bube R.H. Fundamentals of solar cells (1979), Academic Press, Inc., London
4. Makham S., Zazoui M., and Bourgoin J.C. Analysis of multijunction solar cells: electroluminescence study. The Morocan statiscal and condensed matter society. MJ Condensed matter 5 2 (2003) 181-185
5. Walters RJ, Warner JH, Summers GP. Radiation response mechanisms in multijunction III-V space solar cells. In: Photovoltaic specialists conference, 2005. Conference record of the thirty first IEEE; 2005. p. 542-7.
6. Warner J.H., Messenger S.R., Walters R., Summers G., Lorentzen B., Wilt D., et al. Correlation of electron radiation induced-damage in GaAs solar cells. IEEE Trans Nucl Sci (2006) 53
7. Zazoui M., Mbarki M., Aldin A., Bourgoin J.C., Gilard O., and Strobl G. Analysis of multi-junction solar cell in space and irradiation induced recombination centers. J Appl Phys 93 9 (2003) 5080-5084
8. Warner J.H. Correlation of electron radiation induced-damage in GaAs solar cells. IEEE Trans 53 4 (2006) 1988-1994
9. Palik E.D. Handbook of optical constants of solids (1985), Academic Press, New York
10. Palik E.D. Handbook of optical constants of solids II (1991), Academic Press, New York
11. Sze SM. Physics of semiconductor devices. 2nd ed. (1981), John Wiley and sons, New York
12. Masceranhas A. Spontaneous ordering in semiconductor alloys (2002), Springer
13. Levinshtein M., Rumyantsev S., and Shur M. Ternary and quaternary III-V compounds vol. 2 (1996), World Scientific Publishing
14. Brozel M.R., and Stillman S. Properties of gallium arsenide. 3rd ed. (1996), INSPEC publication
15. Meusel M., Baur C., Guter W., Hermle M., Dimroth F., Bett A.W., et al. Development status of European multi-junction space solar cells with high radiation hardness. ESPC (2005) 26-32
16. Schwartz RJ, Gray JL. A numerical model based analysis of the design and operation of a GaInP/GaAs tamdem monolithic solar cell. In: 26th PVSC, September 30-October 3, Anaheim, IEEE; 1997.
17. Dharmarasu N, Yamaguchi M. Analysis of radiation response of InGaP, InGaAsP and InGaAs solar cells by displacement damage dose approach. In: Proceedings of 3rd world conference on photovoltaic energy conversion, May 11-18, Osaka, Japan; 2003. p. 730-3.
18. Yamaguchi M, Carlos-Aburto C, Taylor SJ, Yang M, Takamoto T, Ikeda E, Kurita H, Ohmori M, Uribe RM, Brinker D, Scheiman DA. Radiation-resistance of InGaP solar cells. In: 25th PVSC, May 13-17, Washington, IEEE ; 1996. p. 163-6.
19. Messenger S.R., Burke E.A., Summers G.P., Walters R.J., and Warner J.H. Criteria for identifying radiation resistant semiconductor materials. IEEE Trans Nucl Sci 52 6 (2005) 2276-2280
20. Parenteau M., Carlone C., Morris D., and Khanna S.M. Time-resolved spectroscopy of irradiated n-GaAs. IEEE Trans Nucl Sci 44 (1997) 1849-1855