Ambient gas control in slot-to-slot space inside FOUP to suppress Cu-loss after dual damascene patterning

IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings

Volumn , Issue , 2007, Pages 467-470

  Kamoshima, Takao ^a   Fujii, Yasuhisa ^b   Noguchi, Toshimitsu ^c   Saeki, Tomonori ^c   Takata, Yoshifumi ^a   Ochi, Hironori ^a   Koiwa, Akira ^d  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b Renesas Electronics Corporation   (Japan)

^c HITACHI LTD   (Japan)

^d Renesas Eastern Japan   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL OXYGEN DEMAND; COPPER; ELECTRIC CONDUCTIVITY; OXIDATION; SEMICONDUCTOR MATERIALS;

AMBIENT GASES; DUAL-DAMASCENE; INTERNATIONAL SYMPOSIUM; OXIDATION MODELING; QUEUE TIME; SEMICONDUCTOR MANUFACTURING; WET CLEANING;

COPPER ALLOYS;

EID: 50249098058     PISSN: 1523553X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSM.2007.4446864     Document Type: Conference Paper

References (2)

1. R. Chang, et al., "Reliability Improvement of Cu/low-k Interconnects by Integrating Novel Single Pass Single Wafer Wet Clean," Proc. of ISSM, 2005, pp. 186-189.
2. J. Gambino, et al., "Integration of Copper with Low-k Dielectrics for 0.13μm Technology," Proc. of IPFA, 2002, pp. 111-117.