Multiple turn on of IGBTs in large inverters

IECON Proceedings (Industrial Electronics Conference)

Volumn , Issue , 2006, Pages 1609-1614

  Bakran, Mark M ^a   Helsper, Martin ^a   Eckel, Hans Günter ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE FILTERS; INDUSTRIAL ELECTRONICS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); SPECIAL EFFECTS;

ANNUAL CONFERENCE; CROSS COUPLED;

ELECTRONICS INDUSTRY;

EID: 50249096162     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IECON.2006.347218     Document Type: Conference Paper

References (7)

1. T.Reimann, R. Krümmer, J. Petzoldt, "Investigation of current balance and power loss distribution of parallel connected IGBTs during Active Voltage Clamping", PCIM 2000, Nuremberg, Germany
2. P. Hofer-Noser, N. Karrer, "Monitoring of Parallel IGBT/ Diode Modules", IEEE Transactions On Power Electronics, vol. 14, No. 3, May 1999
3. M. M. Bakran, H.-G. Eckel, "Einsatz von IGBTs in Traktionsumrichtern", ETG-Fachtagung Bauelemente der Leistungselektronik 2002, S. 163-172
4. S.Gediga, R. Marquardt, R. Sommer, "High Power IGBT Converter with new Gate Drive and Protection Circuit", EPE1995, Sevilla, Spain, pp. 1066-1070.
5. M. Bakran, H.-G. Eckel, M.Helsper, A. Nagel, "Challenges in using the latest generation of IGBTs in Traction Converters", EPE 2003, Toulouse, France
6. Berry, J.P., "MOSFET Operating under Hard Switching Mode: Voltage and Current Gradients Control"; EPE European Power Electronics Conference, Firenze, 1991, pp. 0-130-0-134.
7. M. Helsper, F.W. Fuchs, "Adaptation of IGBT Switching Behaviour by Means of Active Gate Drive Control for Low and Medium Power", EPE 2003, Toulouse, France