Silicon undercut characterization in a CMOS-MEMS process

TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems

Volumn , Issue , 2007, Pages 505-508

  Liu, Jingwei ^a   Fedder, Gary K ^a,b  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

CMOS MEMS; MEMS design rules; Silicon undercut; Test structures

Indexed keywords

ACTUATORS; COMPOSITE MICROMECHANICS; ION BOMBARDMENT; MEMS; MICROELECTROMECHANICAL DEVICES; MICROSYSTEMS; NONMETALS; PROCESS ENGINEERING; SENSORS; TRANSDUCERS;

CMOS MEMS; CONTEXT-DEPENDENT; CROSS SECTIONING; ELECTRICAL MEASUREMENTS; ELECTRICAL TESTING; ETCH TIME; EXPONENTIAL EQUATIONS; INTERNATIONAL CONFERENCES; MEMS DESIGN; MEMS DESIGN RULES; OPTICAL OBSERVATIONS; SILICON UNDERCUT; SOLID-STATE SENSORS; TEST STRUCTURES;

SILICON;

EID: 50049125092     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SENSOR.2007.4300178     Document Type: Conference Paper

References (4)

1. G.K. Fedder, et al., "Laminated high-aspect-ratio microstructures in a conventional CMOS process", Sensors and Actuators A, vol. 57, pp. 103-110, 1996.
2. X. Zhu, PhD thesis, CMU, 2002.
3. G. Zhang, et al., "A lateral capacitive CMOS accelerometer with structural curl compensation",MEMS '99, pp. 606-611.
4. A. Oz and G.K. Fedder, "CMOS electrothermal lateral micromovers for actuation and self-assembly", SEM '03, 2003.