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Volumn , Issue , 2007, Pages 1574-1579

Integrated nanoporous silicon nano-explosive devices

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONICS INDUSTRY; EXPLOSIVES; INDUSTRIAL ELECTRONICS; MODEL STRUCTURES; NONMETALS; OXIDANTS; PORE SIZE; POROSITY; SILICON; SPECIFIC SURFACE AREA; TECHNICAL PRESENTATIONS; TECHNOLOGY;

EID: 50049096922     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISIE.2007.4374838     Document Type: Conference Paper
Times cited : (2)

References (14)
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    • McCord, P.1    Yau, S.-L.2    Bard, A.J.3
  • 2
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    • Strong explosive interaction of hydrogenated porous silicon with oxygen at cryogenic temperatures
    • 68301/4
    • D. Kovalev, V.Y. Timoshenko, N. Künzner, E. Gross and F. Koch, "Strong explosive interaction of hydrogenated porous silicon with oxygen at cryogenic temperatures", Physical Review Letters, vol. 87, pp. 68301/1-68301/4, 2001.
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  • 3
    • 39749098516 scopus 로고    scopus 로고
    • Silicon-based gunpowder may propel MEMS devices
    • 24 January
    • R.C. Johnson, "Silicon-based gunpowder may propel MEMS devices", EETIMES, 24 January 2002.
    • (2002) EETIMES
    • Johnson, R.C.1
  • 4
    • 0037016611 scopus 로고    scopus 로고
    • Explosive nanocrystalline porous silicon and its use in atomic emission spectroscopy
    • F.V. Mikulec, J.D. Kirtland, and M.J. Sailor, "Explosive nanocrystalline porous silicon and its use in atomic emission spectroscopy", Advanced Materials, vol. 14, pp. 38-41, 2002.
    • (2002) Advanced Materials , vol.14 , pp. 38-41
    • Mikulec, F.V.1    Kirtland, J.D.2    Sailor, M.J.3
  • 5
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    • Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
    • L.T. Canham, "Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers", Applied Physics Letters, vol. 57, pp. 1046-1049, 1990.
    • (1990) Applied Physics Letters , vol.57 , pp. 1046-1049
    • Canham, L.T.1
  • 7
    • 0001929694 scopus 로고    scopus 로고
    • Porous silicon formation by anodisation
    • L. Canham Ed. INSPEC, London
    • A. Halimaoui, "Porous silicon formation by anodisation", Properties of Porous Silicon, L. Canham Ed. INSPEC, London, 1997, pp. 12-22.
    • (1997) Properties of Porous Silicon , pp. 12-22
    • Halimaoui, A.1
  • 8
    • 0028417319 scopus 로고
    • Determination of the specific surface area of porous silicon from its etch rate in HF solutions
    • A. Halimaoui, "Determination of the specific surface area of porous silicon from its etch rate in HF solutions", Surface Science Letters, vol. 306, pp. L550-L554, 1994.
    • (1994) Surface Science Letters , vol.306
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  • 10
    • 33645238626 scopus 로고    scopus 로고
    • Explosive porous silicon - from laboratory accident to industrial application
    • 5/11, Karlsruhe, Germany, June 29, July 2
    • D Clement, J Diener, and D Kovalev, "Explosive porous silicon - from laboratory accident to industrial application", Proceedings of the 35th International Annual Conference of ICT, pp. 5/1-5/11, Karlsruhe, Germany, June 29 - July 2, 2004.
    • (2004) Proceedings of the 35th International Annual Conference of ICT , pp. 5-1
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  • 12
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    • Impregnation of porous silicon
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    • Hérino, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.