Novel MTO-design based on silicon-silicon bonding

International Power Electronics Congress - CIEP

Volumn 2002-January, Issue , 2002, Pages 27-32

  Detjen, D ^a   Schroder S ^a   Plum, T ^a   De Doncker, R W ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Bonding; Insulated gate bipolar transistors; Manufacturing; Packaging; Power electronics; Semiconductor diodes; Thyristors; Very large scale integration; Voltage; Wires

Indexed keywords

BONDING; CATHODES; ELECTRIC POTENTIAL; ELECTRODES; FINITE ELEMENT METHOD; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); MANUFACTURE; PACKAGING; POWER ELECTRONICS; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SILICON; THYRISTORS; TRANSISTORS; VLSI CIRCUITS; WIRE;

BIPOLAR STRUCTURE; BONDING INTERFACES; DEVICE CHARACTERISTICS; FINITE ELEMENT SIMULATIONS; FULLY INTEGRATED; MOSFET STRUCTURES; REVERSE CONDUCTING; THYRISTOR STRUCTURES;

MOSFET DEVICES;

EID: 49949105871     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CIEP.2002.1216632     Document Type: Conference Paper

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