Growth of high-quality 1-inch diameter AlN single crystal by sublimation method

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2244-2247

  Mizuhara, N ^a   Miyanaga, M ^a   Fujiwara, S ^a   Nakahata, H ^a   Kawase, T ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN SINGLE CRYSTALS; DISLOCATION DENSITIES; HIGH-QUALITY; NITRIDE SEMICONDUCTORS; SIC SUBSTRATES; SUBLIMATION METHOD; X-RAY DIFFRACTION; X-RAY ROCKING CURVE;

CRYSTALLOGRAPHY; CRYSTALS; DISLOCATIONS (CRYSTALS); ELECTRIC CONDUCTIVITY; NITRIDES; POWDERS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; SUBLIMATION;

SINGLE CRYSTALS;

EID: 49749151396     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674811     Document Type: Conference Paper

References (9)

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