Performance enhancement of the tunnel field effect transistor using a SiGe source

Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD

Volumn , Issue , 2007, Pages 111-114

  Patel, Nayan B ^a   Ramesha, A ^a   Mahapatra, Santanu ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

Band to band tunneling; Device simulation; Gated p i n diode; Sub threshold swing; Tunnel field effect transistor (TFET)

Indexed keywords

ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES;

BAND TO BAND TUNNELING; DEVICE SIMULATION; GATED P-I-N DIODE; OFF-STATE CURRENTS; PERFORMANCE ENHANCEMENTS; SUB-THRESHOLD SWING; TUNNEL FIELD EFFECT TRANSISTOR (TFET);

SEMICONDUCTOR DEVICES;

EID: 49749107881     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWPSD.2007.4472465     Document Type: Conference Paper

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