Nitride-organic semiconductor hybrid heterostructures for optoelectronic devices

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2411-2414

  Kim, Hyunjin ^a   Dang, Cuong ^a   Song, Yoon Kyu ^a   Zhang, Qiang ^a   Patterson, William ^a   Nurmikko, A V ^a   Kim, K K ^b   Song, S Y ^b   Han, Jung ^b  

^a BROWN UNIVERSITY   (United States)

^b Yale University   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROSTRUCTURES; NITRIDE SEMICONDUCTORS; ORGANIC SEMICONDUCTOR; ORGANIC THIN FILMS; THIN-FILM MATERIALS; TRANSPORT ACROSS;

COMPOSITE FILMS; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTROOPTICAL DEVICES; FILMS; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; HYBRID MATERIALS; NITRIDES; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; THICK FILMS; THIN FILMS; VAPOR DEPOSITION;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 49749098512     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674924     Document Type: Conference Paper

References (9)

1. F.F. So et al., IEEE Trans. Electron Devices 36, 66 (1989).
2. P. M. Whitmore et al., Phys. Rev. Lett. 50, 1092 (1983).
3. S. Coe et al., Nature 420, 800 (2002).
4. W. Huynh et al., Science 295, 2425 (2002).
5. G. Heliotis et al., Adv. Mater. 18, 334 (2006).
6. C. Kendrick et al., Appl. Surf. Sci. 123, 405 (1998) and related work by the Kahn group at Princeton University.
7. Chun-Yu Lee et al., Appl. Phys. Lett. 89, 23116 (2006).
8. V. M. Agranovich et al., Solid State Commun. 92, 295 (1994).
9. V. M. Agranovich et al., J. Phys.: Condens. Matter 10, 9369 (1998).