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Volumn 51, Issue , 2008, Pages 220-221

A 2.7V 9.8Gb/s burst-mode TIA with fast automatic gain locking and coarse threshold extraction

Author keywords

[No Author keywords available]

Indexed keywords

NETWORKS (CIRCUITS); SOLID STATE DEVICES;

EID: 49549107791     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2008.4523136     Document Type: Conference Paper
Times cited : (13)

References (6)
  • 2
    • 28144464552 scopus 로고    scopus 로고
    • 1.25Gb/s Burst-Mode Receiver ICs with quick response for PON Systems
    • Feb
    • M. Nakamura, Y. Imai, Y. Umeda, et al., "1.25Gb/s Burst-Mode Receiver ICs with quick response for PON Systems," ISSCC Dig. Tech. Papers, pp. 226-227, Feb. 2005.
    • (2005) ISSCC Dig. Tech. Papers , pp. 226-227
    • Nakamura, M.1    Imai, Y.2    Umeda, Y.3
  • 3
    • 34548820425 scopus 로고    scopus 로고
    • A CMOS Burst-Mode TIA with Step AGC and Selective Internally Created Reset for 1.2SGb/s EPON
    • Feb
    • Q. Le, S. G. Lee, H. Y. Kang, et. al., "A CMOS Burst-Mode TIA with Step AGC and Selective Internally Created Reset for 1.2SGb/s EPON," ISSCC Dig. Tech. Papers, pp. 50-51, Feb. 2007.
    • (2007) ISSCC Dig. Tech. Papers , pp. 50-51
    • Le, Q.1    Lee, S.G.2    Kang, H.Y.3    et., al.4
  • 4
    • 49549104815 scopus 로고    scopus 로고
    • Systems and Methods for Transferring Single-Ended Burst Signal on to Differential Lines, Especially for Use in Burst-Mode Receiver,
    • International Patent Application, PCT/EP2006/067215, 9 Oct. 2006
    • P. Ossieur, T. De Ridder, J. Bauwelink, et al., Systems and Methods for Transferring Single-Ended Burst Signal on to Differential Lines, Especially for Use in Burst-Mode Receiver," International Patent Application, PCT/EP2006/067215, 9 Oct. 2006.
    • Ossieur, P.1    De Ridder, T.2    Bauwelink, J.3
  • 5
    • 18444367035 scopus 로고    scopus 로고
    • A 1.25-Gb/s Burst-Mode Receiver for GPON Applications
    • May
    • P. Ossieur, D.Verhulst, Y Martens, et al., "A 1.25-Gb/s Burst-Mode Receiver for GPON Applications," IEEE J. Solid-State Circuits, vol. 40, no. 5, pp. 1180-1189, May 2005.
    • (2005) IEEE J. Solid-State Circuits , vol.40 , Issue.5 , pp. 1180-1189
    • Ossieur, P.1    Verhulst, D.2    Martens, Y.3
  • 6
    • 0030211926 scopus 로고    scopus 로고
    • Degradation of Bipolar Transistor Current Gain by Hot Holes During Reverse Emitter-Base Bias Stress
    • Aug
    • A. Neugroschel, C-T. Sah, M.S. Carroll, "Degradation of Bipolar Transistor Current Gain by Hot Holes During Reverse Emitter-Base Bias Stress," IEEE Trans. Electron Devices, vol. 43, no. 8, pp. 1286-1290, Aug. 1996.
    • (1996) IEEE Trans. Electron Devices , vol.43 , Issue.8 , pp. 1286-1290
    • Neugroschel, A.1    Sah, C.-T.2    Carroll, M.S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.