Adhesion mechanism of metal impurities on Si wafers in alkali solution

Journal of the Electrochemical Society

Volumn 151, Issue 9, 2004, Pages

  Hoshino, T ^a   Hata, M ^a   Neya, S ^a   Morinaga, H ^b  

^a CHIBA UNIVERSITY   (Japan)

^b MITSUBISHI CHEMICAL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL BONDS; COMPLEXATION; CRYSTAL IMPURITIES; HYDROPHILICITY; HYDROXYLATION; LSI CIRCUITS; OPTIMIZATION; PROBABILITY DENSITY FUNCTION; SENSITIVITY ANALYSIS; SOLUTIONS;

ENERGY BARRIERS; METAL IMPURITIES; METAL LIGANDS; ULTRAPURE WATER (UPW);

SILICON WAFERS;

EID: 4944238434     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1775220     Document Type: Article

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