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Volumn 96, Issue 5, 2004, Pages 2423-2427
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Effect of outermost layers on resonant cavity enhanced devices
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Author keywords
[No Author keywords available]
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Indexed keywords
BANDWIDTH;
DENSE WAVELENGTH DIVISION MULTIPLEXING;
ELECTROMAGNETIC WAVE REFLECTION;
ETCHING;
FABRICATION;
MICROELECTROMECHANICAL DEVICES;
MIRRORS;
OPTICAL INTERCONNECTS;
PHASE SHIFT;
PHOTODETECTORS;
QUANTUM EFFICIENCY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
SILICON WAFERS;
PERIODICITY;
QUARTER WAVE MIRRORS (QWM);
RESONANT CAVITY ENHANCED DEVICES;
TUNABLE FILTERS;
OPTOELECTRONIC DEVICES;
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EID: 4944227192
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1775302 Document Type: Article |
Times cited : (6)
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References (16)
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