High performance continuously tunable top-emitting vertical cavity laser with 20nm wavelength range

Electronics Letters

Volumn 33, Issue 12, 1997, Pages 1051-1052

  Li, M Y ^a,b   Yuen, W ^a,b   Li, G S ^a,b   Chang Hasnain, C J ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b STANFORD UNIVERSITY   (United States)

Author keywords

Micromechanical devices; Vertical cavity surface emitting lasers

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; LASER MODES; LASER TUNING; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SPECTRUM ANALYSIS;

VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0031554364     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970698     Document Type: Article

References (4)

1. M.Y. Li, W. Yuen and G.S. Li: Also affiliated with Stanford University, Stanford, CA 94305, USA
2. VAIL, E.G., LI, G.S., YUEN, W., and CHANG-HASNAIN, C.J.: 'High performance micromechanical tunable vertical cavity surface emitting lasers', Electron. Lett., 1996, 32, (20), pp. 1888-1889
3. SUGIHWO, F., LARSON, M.C., and HARRIS, J.S.: 'Low threshold continuously tunable vertical-cavity surface-emitting lasers with 19.1nm wavelength range', Appl. Phys. Lett., 1997, 70, (5), pp. 547-549
4. SALIMIAN, S., and COOPER, C.B.: 'Selective dry etching of GaAs over AlGaAs in SF6/SiCL4 mixtures', J. Vac. Sci. Technol., 1988, 6, (6), pp. 1641-1644