Microstructural changes in GeSbTe film during repetitious overwriting in phase-change optical recording

Journal of Applied Physics

Volumn 78, Issue 12, 1995, Pages 6980-6988

  Nobukuni, N ^a   Takashima, M ^a   Ohno, T ^a   Horie, M ^a  

^a MITSUBISHI CHEMICAL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; LIQUEFACTION; MICROSTRUCTURE; OPTICAL RECORDING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR LASERS; SILICA; SOLIDIFICATION; TANTALUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

GERMANIUM ANTIMONY TELLURIDE; PHASE CHANGE OPTICAL RECORDING; REPETITIOUS OVERWRITING; SINK FORMATION; TANTALUM OXIDES; VOID FORMATION;

SEMICONDUCTING FILMS;

EID: 0029520750     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360465     Document Type: Article

References (0)