New mechanism of intraband carrier relaxation in quantum dots

Physica Status Solidi C: Conferences

Volumn , Issue 4, 2003, Pages 1217-1220

  Baranov, A V ^a   Fedorov, A V ^a   Rukhlenko, I D ^a   Masumoto, Yasuaki ^b  

^a VAVILOV STATE OPTICAL INSTITUTE   (Russian Federation)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER RELAXATION; CHARGE DENSITY FLUCTUATIONS; COLLECTIVE EXCITATIONS; ELECTRONIC DYNAMICS; INAS/GAAS QUANTUM DOTS; INTRABAND CARRIER RELAXATION; ORDERS OF MAGNITUDE; RELAXATION RATES;

PHONONS; PHOTOLUMINESCENCE SPECTROSCOPY; PLASMONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 4944222240     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303049     Document Type: Conference Paper

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