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1
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49349113070
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Predictive & Prognostic Controller for Wide Band Gap (Silicon Carbide) Power Conversion
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March
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B. Jordan, J. Scofield, K. Keller, J. Sheahan, J. Roach, G. Davis, L. Casey, M. Prestero, M. Scherrer & R. Singh, "Predictive & Prognostic Controller for Wide Band Gap (Silicon Carbide) Power Conversion" IEEE Aerospace Conference Proceedings, March 2007.
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(2007)
IEEE Aerospace Conference Proceedings
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Jordan, B.1
Scofield, J.2
Keller, K.3
Sheahan, J.4
Roach, J.5
Davis, G.6
Casey, L.7
Prestero, M.8
Scherrer, M.9
Singh, R.10
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2
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0004043346
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Laidler, K. J, Oxford University Press
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The World of Physical Chemistry, Laidler, K. J. (1993) Oxford University Press.
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(1993)
The World of Physical Chemistry
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3
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3142678981
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Temperature dependency of MOSFET device characteristics in 4H- and 6H-silicon carbide (SiC), Elsevier; Md. Hasanuzzaman, Syed K. Islam, Leon M. Tolbert Mohammad T. Alam, Solid-State Electronics 48 (2004) 1877-1881, Department of Electrical and Computer Engineering, The University of Tennessee.
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"Temperature dependency of MOSFET device characteristics in 4H- and 6H-silicon carbide (SiC)", Elsevier; Md. Hasanuzzaman, Syed K. Islam, Leon M. Tolbert Mohammad T. Alam, Solid-State Electronics 48 (2004) 1877-1881, Department of Electrical and Computer Engineering, The University of Tennessee.
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4
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49349107895
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Silicon Carbide Vertical Junction Field Effect Transistors Operated at Junction Temperatures Exceeding 300° C, J. N. Merrett, W. A. Draper, J.R.B. Casady, J. B. Casady, I. Sankin, R. Kelley SemiSouth Laboratories Inc., V. Bondarenko, M. Mazzola, D. Seale Mississippi State University, Department of Electrical and Computer Engineering.
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"Silicon Carbide Vertical Junction Field Effect Transistors Operated at Junction Temperatures Exceeding 300° C", J. N. Merrett, W. A. Draper, J.R.B. Casady, J. B. Casady, I. Sankin, R. Kelley SemiSouth Laboratories Inc., V. Bondarenko, M. Mazzola, D. Seale Mississippi State University, Department of Electrical and Computer Engineering.
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5
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49349087922
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High-Temperature Static and Dynamic Reliability Study of 4H-SiC Vertical-Channel JFETs for High-Power System Applications, L. Cheng, P. Martin, M. Mazzola, D. Sheridan, R. Kelly, V. Bondarenko, R. Gray, G. Tian, J. Scofield, J. R. B. Casady & J. B. Casady, International Conference on Silicon Carbide and Related Materials (ICSCRM) 2007, Oct. 14-19, 2007
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"High-Temperature Static and Dynamic Reliability Study of 4H-SiC Vertical-Channel JFETs for High-Power System Applications", L. Cheng, P. Martin, M. Mazzola, D. Sheridan, R. Kelly, V. Bondarenko, R. Gray, G. Tian, J. Scofield, J. R. B. Casady & J. B. Casady, International Conference on Silicon Carbide and Related Materials (ICSCRM) 2007, Oct. 14-19, 2007
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6
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49349115261
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Fast Thermal Modeling of Power Semiconductor Devices using Fourier Techniques, J.J. Nelson, G. Venkataramana, A.M. El-Refaie, University of Wisconsin-Madison.
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"Fast Thermal Modeling of Power Semiconductor Devices using Fourier Techniques", J.J. Nelson, G. Venkataramana, A.M. El-Refaie, University of Wisconsin-Madison.
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7
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49349088641
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Pulse-by-Pulse Predictive Current Control
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B. Borowy & L. Casey, "Pulse-by-Pulse Predictive Current Control", IEEE APEC 2006.
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(2006)
IEEE APEC
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Borowy, B.1
Casey, L.2
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