Characterisation of silicon nitride thin films used as stressor liners on CMOS FETs

ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon

Volumn , Issue , 2008, Pages 199-202

  Raymond, G ^a,b   Morin, P ^c   Devos, A ^d   Hess, D A ^b   Braccini, M ^a   Volpi, F ^a  

^a UNIV GRENOBLE ALPES   (France)

^b FREESCALE SEMICONDUCTOR INC   (United States)

^c STMICROELECTRONICS   (France)

^d INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTICS; MOLECULAR BEAM EPITAXY; NANOINDENTATION; NITRIDES; NONMETALS; SILICON; SILICON NITRIDE; SPECIFICATIONS; TECHNOLOGY; THICK FILMS; THIN FILMS; VAPOR DEPOSITION;

CHARACTERISATION; CHEMICAL-; CMOS TECHNOLOGIES; CONTACT ETCH STOP LAYERS; IN-BAND; INTERNATIONAL CONFERENCES; MECHANICAL MEASUREMENTS; PERFORMANCE ENHANCEMENTS; PICO SECONDS; PMOS TRANSISTORS; SATURATION CURRENTS; SILICON NITRIDE THIN FILMS; STRUCTURE DISTORTIONS; YOUNG'S MODULUS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 49149095139     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULIS.2008.4527173     Document Type: Conference Paper

References (8)

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