Substrate bias effect on Ge pMOSFETs with and without halo

ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon

Volumn , Issue , 2008, Pages 11-14

  Simoen, E ^a   Voroshazi, E ^a   Mitard, J ^a   Eneman, G ^b   Brunco, D P ^c   De Jaeger, B ^a   Meuris, M ^a  

^a IMEC   (Belgium)

^b RESEARCH FOUNDATION FLANDERS FWO   (Belgium)

^c INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; NONMETALS;

INTERNATIONAL CONFERENCES; P-MOSFETS; SUBSTRATE BIASING;

SILICON;

EID: 49049120761     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULIS.2008.4527130     Document Type: Conference Paper

References (12)

1. K. Roy, S. Mukopadhyay and H. Mahmoodi-Meimand, Proc. IEEE, 91, p. 305 (2003).
2. J.C.S. Woo and J.D. Plummer, IEEE Trans. Electron Devices, 33, p. 1012 (1986).
3. M.J. Deen and Z.X. Yan, IEEE Trans. Electron Devices, 37, p. 1707 (1990).
4. C. Claeys and E. Simoen, Germanium Based Technologies -From Materials to Devices, Elsevier (2007).
5. P. Zimmerman et al., IEDM Tech. Dig. (2006).
6. G. Nicholas et al. IEEE Trans. Electron Devices, 54. p. 2503 (2007).
7. G. Eneman et al., Proc. ESSDERC 2007, p. 454 (2007).
8. F. Leys et al., Mat. Sci. Semicond. Process, 9, p. 679 (2006).
9. D.S. Wu, IEEE Trans. Electron Devices, 27, p. 995 (1980).
10. D.W. Feldbaumer and D.K. Schroder, IEEE Trans. Electron Devices, 38, p. 135 (1991).
11. D.K. Schroder. Semiconductor Material and Device Characterization, Wiley-Interscience, 3rd Edition (2006).
12. K. Remashan, N.A. Wong, K. Chan, S.P. Sim and C.Y. Yang, Solid-State Electron., 46, p. 153 (2002).