The role of shallow trench isolation on channel width noise scaling for narrow width CMOS and flash cells

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2008, Pages 85-86

  Lu, Yin Ng Ryan ^a   Liao, Yu Ching ^a   McMahon, William ^a   Lee, Yung Huei ^a   Kung, Helen ^a   Fastow, Richard ^a   Sean, Ma ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SECURITY SYSTEMS; SEMICONDUCTING SILICON; SPEECH ANALYSIS; TECHNOLOGY;

CELL SIZES; CHANNEL WIDTH; CRITICAL AREAS; FLASH CELLS; INTERNATIONAL SYMPOSIUM; NARROW WIDTH; RTS NOISE; SHALLOW-TRENCH ISOLATION; VLSI TECHNOLOGIES;

FLASH MEMORY;

EID: 49049118448     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2008.4530810     Document Type: Conference Paper

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