High-mobility bottom-contact thin-film transistor based on anthracene oligomer

Organic Electronics

Volumn 9, Issue 5, 2008, Pages 921-924

  Kumaki, Daisuke ^a   Umeda, Tokiyoshi ^b   Suzuki, Toshiyasu ^c   Tokito, Shizuo ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b NHK SCIENCE AND TECHNICAL RESEARCH LABORATORIES   (Japan)

^c INSTITUTE FOR MOLECULAR SCIENCE   (Japan)

Author keywords

Anthracene oligomer; Bottom contact organic thin film transistor; Carrier injection layer; Contact resistance; MoOx

Indexed keywords

ANTHRACENE; CONTACT RESISTANCE; ELECTRODES; FIELD EFFECT TRANSISTORS; MOLYBDENUM OXIDE; OLIGOMERS; SEMICONDUCTING ORGANIC COMPOUNDS; SILICA; THIN FILM CIRCUITS; THIN FILMS;

ANTHRACENE OLIGOMER; BOTTOM-CONTACT ORGANIC THIN-FILM TRANSISTOR; CARRIER INJECTION LAYER; INJECTION BARRIERS; MOLECULAR LENGTH; MOOX; OUTPUT CHARACTERISTICS; THIN FILM TRANSISTORS (TFTS);

THIN FILM TRANSISTORS;

EID: 49049110020     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2008.06.012     Document Type: Article

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