Heavy ions irradiated crystal GaAs as an active non-linear matrix for the generation of THz radiation

Radiation Measurements

Volumn 43, Issue SUPPL.1, 2008, Pages

  Nazarov, M M ^a   Shepelev, A V ^b   Shkurinov, A P ^a   Skuratov, V A ^c   Zagorski, D L ^d  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

^b MOSCOW STATE TEXTILE UNIVERSITY   (Russian Federation)

^c JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

^d SHUBNIKOV INSTITUTE OF CRYSTALLOGRAPHY   (Russian Federation)

Author keywords

GaAs, Non linear optic; Heavy ions irradiation; Semiconductor crystal; Terahertz frequency generation

Indexed keywords

EIGENVALUES AND EIGENFUNCTIONS; ELECTROLYSIS; ELECTROMAGNETISM; GALLIUM ALLOYS; HEAVY IONS; IRRADIATION; KRYPTON; POWDERS; SEMICONDUCTING GALLIUM;

CONTINUOUS WAVE TERAHERTZ (THZ) RADIATION; ELECTROMAGNETIC IRRADIATION (EMI); FLUENCE; ION-INDUCED DEFECTS; NON-LINEAR; NON-LINEAR PROPERTIES; OPTICAL RECTIFICATION (OR); SEMICONDUCTOR CRYSTALS; TERAHERTZ (THZ) FREQUENCIES;

IONS;

EID: 48549096625     PISSN: 13504487     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.radmeas.2008.04.067     Document Type: Article

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