Diode-end-pumped passively mode-locked Nd:GGG laser with a semiconductor saturable mirror

Optics Communications

Volumn 281, Issue 18, 2008, Pages 4762-4764

  Qin, L J ^a   Tang, D Y ^b   Xie, G Q ^b   Luo, H ^b   Dong, C M ^c   Jia, Z T ^c   Yu, H H ^c   Tao, X T ^c  

^a YANTAI UNIVERSITY   (China)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c SHANDONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; ELECTRIC CONDUCTIVITY; FIBER LASERS; GADOLINIUM; GALLIUM; GARNETS; LASERS; NEODYMIUM; PULSED LASER DEPOSITION; PUMPING (LASER); SEMICONDUCTING GALLIUM; SEMICONDUCTOR DIODES; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; SILICATE MINERALS;

CONTINUOUS WAVE (C.W.); DIODE END-PUMPED; DIODE PUMPING; GADOLINIUM GALLIUM GARNET (GGG); MODE-LOCKED PULSES; MODE-LOCKING; OUTPUT POWERS; PASSIVE MODE-LOCKING; PASSIVELY MODE-LOCKED; REPETITION RATES; SEMICONDUCTOR SATURABLE-ABSORBER MIRROR (SESAM);

MIRRORS;

EID: 48549087060     PISSN: 00304018     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optcom.2008.06.011     Document Type: Article

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