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Volumn , Issue , 2005, Pages

CUBE SAT SACRED: A student project to investigate radiation effects

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC DEVICES; EUROPEAN; MISSION GOALS;

EID: 48349141550     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RADECS.2005.4365618     Document Type: Conference Paper
Times cited : (6)

References (10)
  • 1
    • 0025669259 scopus 로고
    • Modeling the anneal of radiation-induced trapped holes in a varying thermal environment
    • Dec
    • P. J. McWhorter, S. L. Miller and W. M. Miller, " Modeling the anneal of radiation-induced trapped holes in a varying thermal environment ", IEEE Trans. on Nucl. Sci., vol. 37, pp. 1682-1689, Dec. 1990.
    • (1990) IEEE Trans. on Nucl. Sci , vol.37 , pp. 1682-1689
    • McWhorter, P.J.1    Miller, S.L.2    Miller, W.M.3
  • 2
    • 84937351137 scopus 로고
    • Determining the energy distribution of pulse-radiation-induced charge in MOS structures from rapid annealing measurements
    • M. Simons and H. L. Hughes, " Determining the energy distribution of pulse-radiation-induced charge in MOS structures from rapid annealing measurements ", IEEE Trans. on Nucl. Sci., vol. 19, pp. 282-290, 1972.
    • (1972) IEEE Trans. on Nucl. Sci , vol.19 , pp. 282-290
    • Simons, M.1    Hughes, H.L.2
  • 3
    • 48349123698 scopus 로고    scopus 로고
    • F. B. McLean, A direct tunneling model of charge transfer at the insulator-semiconductor interface in MIS devices , U.S. Government Report # HDL-TR-1765, Oct. 1976.
    • F. B. McLean, " A direct tunneling model of charge transfer at the insulator-semiconductor interface in MIS devices ", U.S. Government Report # HDL-TR-1765, Oct. 1976.
  • 4
    • 0034452346 scopus 로고    scopus 로고
    • Experimental procedure to predict the competition between the degradation induced by irradiation and thermal annealing of oxide trapped charge in MOSFETs
    • Dec
    • F. Saigne, L. Dusseau, J. Fesquet, J. Gasiot, R. Ecoffet, R.D. Schrimpf, K. F. Galloway, "Experimental procedure to predict the competition between the degradation induced by irradiation and thermal annealing of oxide trapped charge in MOSFETs", IEEE Trans. on Nucl. Sci. vol. 47, pp 2329-2333, Dec. 2000.
    • (2000) IEEE Trans. on Nucl. Sci , vol.47 , pp. 2329-2333
    • Saigne, F.1    Dusseau, L.2    Fesquet, J.3    Gasiot, J.4    Ecoffet, R.5    Schrimpf, R.D.6    Galloway, K.F.7
  • 5
    • 0000634541 scopus 로고    scopus 로고
    • Prediction of low dose-rate effects in power metal oxide semiconductor field effect transistors based on isochronal annealing measurements
    • March
    • L. Dusseau, T. L. Randolph, R. D. Schrimpf, K. F. Galloway, F. Saigné, J. Fesquet, J. Gasiot and R. Ecoffet, " Prediction of low dose-rate effects in power metal oxide semiconductor field effect transistors based on isochronal annealing measurements, " Journal of Applied Physics, vol. 81, pp. 2437-2441, March 1997.
    • (1997) Journal of Applied Physics , vol.81 , pp. 2437-2441
    • Dusseau, L.1    Randolph, T.L.2    Schrimpf, R.D.3    Galloway, K.F.4    Saigné, F.5    Fesquet, J.6    Gasiot, J.7    Ecoffet, R.8
  • 7
    • 0036624392 scopus 로고    scopus 로고
    • Germanicus, R.; Dusseau, L.; Saigne, F.; Barde, S.; Ecoffet, R.; Mion, O.; Calvel, R.; Fesquet, J.; Gasiot, J.; Analysis of the proton-induced permanent degradation in an optocoupler IEEE Trans. Nuclear Science Vol49. pp. 1421-1425, 2002.
    • Germanicus, R.; Dusseau, L.; Saigne, F.; Barde, S.; Ecoffet, R.; Mion, O.; Calvel, R.; Fesquet, J.; Gasiot, J.; Analysis of the proton-induced permanent degradation in an optocoupler IEEE Trans. Nuclear Science Vol49. pp. 1421-1425, 2002.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.