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Volumn 2, Issue , 2007, Pages 988-994
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DEPFET detector-amplifier structure: Properties, achievements and new developments, concepts and applications
a,d b,d a,d b,d c,d b,d b,d b,d
a
PNSENSOR GMBH
(Germany)
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Author keywords
[No Author keywords available]
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Indexed keywords
ASTRONOMY MISSIONS;
BUILDING BLOCKS;
CHARGE MEASUREMENTS;
COMMON PROPERTIES;
DYNAMIC RANGES;
ELEMENTARY CHARGES;
FREE ELECTRONS;
HIGH QUALITIES;
HIGH RESOLUTIONS;
NEW CONCEPTS;
NEW DEVELOPMENTS;
NON-LINEAR DEVICES;
PIXEL DETECTORS;
SEMICONDUCTOR PIXELS;
SIGNAL CHARGES;
SILICON PROCESSING;
SIMULTANEOUS MEASUREMENTS;
TIME INTERVALS;
APPLICATIONS;
DETECTORS;
ELECTRIC CONDUCTIVITY;
FREE ELECTRON LASERS;
LASERS;
LIGHT;
MEDICAL IMAGING;
PIXELS;
READOUT SYSTEMS;
SEMICONDUCTING SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR MATERIALS;
SILICON DETECTORS;
SEMICONDUCTOR DETECTORS;
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EID: 48349111022
PISSN: 10957863
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/NSSMIC.2007.4437181 Document Type: Conference Paper |
Times cited : (9)
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References (2)
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