메뉴 건너뛰기




Volumn 93, Issue 3, 2008, Pages

Isotope disorder of phonons in GaN and its beneficial effect on high power field effect transistors

Author keywords

[No Author keywords available]

Indexed keywords

DC GENERATORS; GALLIUM ALLOYS; GALLIUM NITRIDE; HOT ELECTRONS; ISOTOPES; PHONONS; POWER ELECTRONICS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON; TRANSISTORS;

EID: 48249150005     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2961120     Document Type: Article
Times cited : (20)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.