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Volumn 93, Issue 3, 2008, Pages
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Isotope disorder of phonons in GaN and its beneficial effect on high power field effect transistors
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Author keywords
[No Author keywords available]
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Indexed keywords
DC GENERATORS;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
HOT ELECTRONS;
ISOTOPES;
PHONONS;
POWER ELECTRONICS;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING SILICON;
TRANSISTORS;
AMERICAN INSTITUTE OF PHYSICS (AIP);
BENEFICIAL EFFECTS;
ELECTRONIC DEVICES;
HIGH POWERS;
HOT-PHONON EFFECTS;
ISOTOPE DISORDER;
LONGITUDINAL OPTICAL (LO) PHONONS;
LONGITUDINAL-OPTICAL (LO);
PHONON MODES;
ROOM-TEMPERATURE (RT);
SATURATION VELOCITY;
FIELD EFFECT TRANSISTORS;
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EID: 48249150005
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2961120 Document Type: Article |
Times cited : (20)
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References (13)
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