Surface structure of Si(1 1 1)-(8 × 2)-In determined by reflection high-energy positron diffraction

Surface Science

Volumn 602, Issue 14, 2008, Pages 2448-2452

  Fukaya, Y ^a   Hashimoto, M ^a   Kawasuso, A ^a   Ichimiya, A ^a,b  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b JAPAN WOMEN'S UNIVERSITY   (Japan)

Author keywords

Indium; Phase transition; Reflection high energy positron diffraction; Silicon; Surface structure; Total reflection

Indexed keywords

ATOMIC PHYSICS; ATOMS; CHAINS; DIFFRACTION; HIGH ENERGY PHYSICS; KETONES; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; METALS; POSITRONS; REFLECTION; SEMICONDUCTOR INSULATOR BOUNDARIES; STRUCTURAL OPTIMIZATION; SUPERFLUID HELIUM; SURFACE STRUCTURE;

(1 1 0) SURFACE; ATOMIC CHAINS; ELSEVIER (CO); FIRST-PRINCIPLES CALCULATIONS; LOW TEMPERATURE (LTR); METAL-INSULATOR (M-I) TRANSITION; QUASI ONE DIMENSIONAL (Q1D); REFLECTION HIGH ENERGY POSITRON DIFFRACTION (RHEPD); ROCKING CURVE (RC); TRANSITION (JEL CLASSIFICATIONS:E52 ,E41 ,E31); ZIG ZAG CHAINS;

CRYSTAL ATOMIC STRUCTURE;

EID: 48149099920     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2008.05.021     Document Type: Article

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