GaN HEMT based Doherty amplifier for 3.5-GHz WiMAX applications

European Microwave Week 2007 Conference Proceedings, EuMW 2007 - 2nd European Microwave Integrated Circuits Conference, EuMIC 2007

Volumn , Issue , 2007, Pages 395-398

  Moon, Junghwan ^a   Kim, Jangheon ^a   Kim, Ildu ^a   Woo, Young Yun ^b   Hong, Sungchul ^b   Kim, Han Seok ^b   Lee, Jong Sung ^b   Kim, Bumman ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONICS INDUSTRY; GALLIUM NITRIDE; INTEROPERABILITY; MICROWAVE CIRCUITS; MICROWAVE INTEGRATED CIRCUITS; MICROWAVES; SEMICONDUCTING GALLIUM; TECHNOLOGY;

DOHERTY AMPLIFIERS; EUROPEAN; GAN-HEMT; MICROWAVE ACCESS; WIMAX APPLICATIONS; WIRELESS TECHNOLOGIES;

INTEGRATED CIRCUITS; MICROWAVES;

EID: 48149092123     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EMICC.2007.4412732     Document Type: Conference Paper

References (16)

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