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Volumn 53, Issue 24, 2008, Pages 7331-7337
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Room temperature electrodeposition of aluminum antimonide compound semiconductor
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Author keywords
1 Methyl 3 ethylimidazolium chloride; AlSb; Compound semiconductor; Pulsed potential electrodeposition; Room temperature molten salt
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Indexed keywords
ALUMINUM;
ALUMINUM METALLOGRAPHY;
ELECTRIC CONDUCTIVITY;
ELECTRONIC PROPERTIES;
FUSED SALTS;
GARNETS;
LIGHT METALS;
METALLIZING;
REDUCTION;
SEMICONDUCTOR MATERIALS;
(PL) PROPERTIES;
ALUMINUM ANTIMONIDE (ALSB);
ALUMINUM TRICHLORIDE;
BRIDGMAN METHODS;
COMPOUND SEMICONDUCTOR (CS);
CZOCHRALSKI (CZ);
HIGH-TEMPERATURE PROCESSING;
III-V COMPOUND SEMICONDUCTORS;
ROOM-TEMPERATURE (RT);
ROOM-TEMPERATURE MOLTEN SALTS;
ELECTRODEPOSITION;
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EID: 48049113711
PISSN: 00134686
EISSN: None
Source Type: Journal
DOI: 10.1016/j.electacta.2008.04.014 Document Type: Article |
Times cited : (33)
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References (39)
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