AlSb single-crystal grown by HPBM

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 458, Issue 1-2, 2001, Pages 448-454

  Kutny, V E ^a   Rybka, A V ^a   Abyzov, A S ^a   Davydov, L N ^a   Komar, V K ^b   Rowland, M S ^c   Smith, C F ^c  

^a KHARKOV INSTITUTE OF PHYSICS AND TECHNOLOGY   (Ukraine)

^b STC ISC   (Ukraine)

^c LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL);

HIGH-PRESSURE BRIDGMAN METHOD (HPBM);

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0035250994     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(00)01039-1     Document Type: Article

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