Influence of a lossy silicon substrate on conductance and capacitance of coupled interconnects

Journal of Microwaves and Optoelectronics

Volumn 3, Issue 3, 2003, Pages 49-53

  Ymeri, H ^a   Nauwelaers, B ^a   Maex, Karen ^a,b   De Roest, D ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

Author keywords

Analytic; Frequency dependent shunt admittance parameters; Lossy silicon; VLSI interconnects

Indexed keywords

ANALYTIC; ANALYTIC FORMULA; CIRCUIT MODELING; CLOSED FORM; CLOSED FORM SOLUTIONS; COUPLED INTERCONNECTS; FREQUENCY-DEPENDENT; FREQUENCY-DEPENDENT CAPACITANCE; INTERCONNECT LINES; PER UNIT LENGTH; SHUNT ADMITTANCES; SHUNT CAPACITANCE; SILICON OXIDE SUBSTRATES; SILICON SUBSTRATES; VLSI INTERCONNECTS;

SILICON OXIDES;

CAPACITANCE;

EID: 47649105636     PISSN: 15167399     EISSN: 21791074     Source Type: Journal    
DOI: None     Document Type: Article

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