Highly thermal stable transparent conducting SnO 2 :Sb epitaxial films prepared on α-Al 2 O 3 (0 0 0 1) by MOCVD

Applied Surface Science

Volumn 254, Issue 20, 2008, Pages 6601-6604

  Feng, Xianjin ^a   Ma, Jin ^a   Yang, Fan ^a   Ji, Feng ^a   Zong, Fujian ^a   Luan, Caina ^a   Ma, Honglei ^a  

^a SHANDONG UNIVERSITY   (China)

Author keywords

Annealing; Antimony doped tin oxide films; MOCVD

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ANNEALING; ANTIMONY COMPOUNDS; CONDUCTIVE FILMS; FILM PREPARATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOCOMPOSITES; OPTICAL PROPERTIES; ORGANIC CHEMICALS; ORGANOMETALLICS; OXIDE FILMS; SEMICONDUCTOR DOPING; THERMODYNAMIC STABILITY; TIN OXIDES;

A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); ANTIMONY DOPING; ANTIMONY-DOPED TIN OXIDE; EFFECT OF ANNEALING; ELECTRICAL AND OPTICAL PROPERTIES; HIGH THERMAL STABILITY; POST DEPOSITION ANNEALING; SINGLE-CRYSTALLINE FILM;

OPTICAL FILMS;

EID: 47549101815     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.04.028     Document Type: Article

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