Emission properties of high- Q silicon nitride photonic crystal heterostructure cavities

Applied Physics Letters

Volumn 93, Issue 2, 2008, Pages

  Barth, Michael ^a   Nüsse, Nils ^b   Stingl, Johannes ^a   Löchel, Bernd ^b   Benson, Oliver ^a  

^a HUMBOLDT UNIVERSITY   (Germany)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BANDPASS FILTERS; CRYSTAL ATOMIC STRUCTURE; LIGHT; LIGHT SOURCES; LIGHTING; NITRIDES; NONMETALS; OPTICAL DESIGN; PHOTONIC CRYSTALS; POWDERS; Q FACTOR MEASUREMENT; SILICON; SILICON NITRIDE; STEREOCHEMISTRY;

AMERICAN INSTITUTE OF PHYSICS (AIP); CAVITY MODE (CM); DOUBLE HETEROSTRUCTURE (DHS); EMISSION PROPERTIES; HETERO STRUCTURES; INTRINSIC LUMINESCENCE; MATERIAL SYSTEMS; OPTICAL CHARACTERIZATIONS; PHOTONIC; PHOTONIC CRYSTAL (PC) DEVICES; PHOTONIC CRYSTAL (PHC); POLARIZATION PROPERTIES; QUALITY FACTOR (Q FACTOR); VISIBLE-WAVELENGTH RANGE;

MICROCOMPUTERS;

EID: 47549085731     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2958346     Document Type: Article

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