High - Mobility, low parasitic resistance Si/Ge/Si heterostructure channel Schottky Source/Drain PMOSFETs

65th DRC Device Research Conference

Volumn , Issue , 2007, Pages 55-56

  Pethe, Abhijit ^a   Saraswat, Krishna ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 47249151957     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2007.4373649     Document Type: Conference Paper

References (3)

1. Chui et.al., IEDM 2002, pp. 437
2. Xiong et.al., IEEE Trans. Elec. Devices, 52, 2005, pp. 1859
3. Krishnamohan et.al., IEEE Trans. Elec. Dev., 53, 2006 pp. 990.