1.65 μm buffer-free GaSb/AlGaSb quantum-well diode lasers grown on a GaAs substrate operating at room temperature

65th DRC Device Research Conference

Volumn , Issue , 2007, Pages 193-194

  Mehta, M ^a   Balakrishnan, G ^a   Jallapali, A ^a   Kutty, M N ^a   Dawson, L R ^a   Huffaker, D L ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 47249146142     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2007.4373714     Document Type: Conference Paper

References (5)

1. M. Mehta et. al., Appl. Phys. Lett., Vol. 89, pp. 211110 (2006)
2. S. Huang et. al., Appl. Phys. Lett., Vol. 88, pp. 131911 (2006)
3. G. balakrishnan et. al., IEEE Journal of Selected Topics in Quantum Electronics, Vol. 12, pp. 1636 (2006)
4. S.R. Bank et. al., Elec. Lett., Vol. 42, pp. 156 (2006)
5. Y. Ohmori et. al., Jap. Journ. of Appl. Phys., Vol. 24, pp. L657 (1985)