Scalability of Direct Silicon Bonded (DSB) technology for 32nm node and beyond

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2007, Pages 222-223

  Yin, Haizhou ^a   Sung, C Y ^b   Saenger, K L ^b   Hamaguchi, M ^c   Hasumi, R ^c   Ohuchi, K ^c   Ng, H ^a   Zhang, R ^a   Stein, K J ^a   Wallner, T A ^a   Li, J ^a   Ott, J A ^b   Chen, X ^a   Luo, Z J ^a   Rovedo, N ^a   Fogel, K ^b   Pfeiffer, G ^a   Kleinhenz, R ^a   Bendernagel, R ^a   Sadana, D K ^b   Takayanagi, M ^c   Ishimaru, K ^c   Crowder, S W ^a   Park, D ^b   Khare, M ^b   Shahidi, G ^b   more..

^a IBM RESEARCH   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c Toshiba America Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; NANOTECHNOLOGY; NONMETALS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; SOLAR RADIATION; SPEECH ANALYSIS; TECHNOLOGY;

DEFECT FREE; INTEGRATION SCHEMES; SHALLOW TRENCH ISOLATION (STI); SOLID PHASE EPITAXY (II/SPE); VLSI TECHNOLOGIES;

SEMICONDUCTING SILICON;

EID: 47249105956     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2007.4339701     Document Type: Conference Paper

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