Detection of nanoscale etch and ash damage to nanoporous methyl silsesquioxane using electrostatic force microscopy

Microelectronic Engineering

Volumn 85, Issue 2, 2008, Pages 401-407

  Gross, Todd ^a   Yao, Shaoning ^b   Satyanarayana, Sri ^c  

^a UNIVERSITY OF NEW HAMPSHIRE   (United States)

^b IBM MICROELECTRONICS   (United States)

^c Advanced Process Control   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CERAMIC CAPACITORS; DAMAGE DETECTION; DEGRADATION; DIELECTRIC WAVEGUIDES; ELECTROSTATIC DEVICES; ELECTROSTATIC FORCE; ELECTROSTATICS; FETAL MONITORING; MOISTURE; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; PERMITTIVITY; REACTIVE ION ETCHING; SULFATE MINERALS;

APPARENT DIELECTRIC CONSTANT; AS-DEPOSITED; DAMASCENE PROCESSING; DIELECTRIC CONSTANTS; ELECTROSTATIC FORCE MICROSCOPY (EFM); METHYL SILSESQUIOXANE (MSSQ); MSQ FILMS; NANO POROUS; NANO SCALING; NANOSCALE ETCH; PATTERNED FILMS; REACTIVE ION ETCHING (REI); SIDE WALLS; STRENGTH (IGC: D5/D6);

DIELECTRIC MATERIALS;

EID: 47049087024     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.07.014     Document Type: Article

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