Stimulated photoluminescence emission and trap states in Si/SiO2 interface formed by irradiation of laser

Chinese Physics B

Volumn 17, Issue 5, 2008, Pages 1817-1820

  Huang, Wei Qi ^a   Xu, Li ^a   Wang, Hai Xu ^a   Jin, Feng ^a   Wu, Ke Yue ^a   Liu, Shi Rong ^b   Qin, Cao Jian ^b   Qin, Shui Jie ^a  

^a GUIZHOU UNIVERSITY   (China)

^b INSTITUTE OF GEOCHEMISTRY   (China)

Author keywords

Interface states; Laser irradiation; Oxide structure of silicon; Stimulated emission

Indexed keywords

ANNEALING; LASERS; LIGHT EMISSION; LUMINESCENCE; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; RADIATION; SILICON; STIMULATED EMISSION;

(100) SILICON; ANNEALING TREATMENTS; EMISSION INTENSITIES; LASER IRRADIATIONS; NANO CRYSTALS; OXIDE STRUCTURES; PHOTOLUMINESCENCE (PL) EMISSIONS; PUMP POWERS; TRANSITION (JEL CLASSIFICATIONS:E52 ,E41 ,E31); TRAP STATES;

POROUS SILICON;

EID: 46749144205     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/17/5/044     Document Type: Article

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