Quantum-confined stark effects in a single GaN quantum dot

Chinese Physics Letters

Volumn 25, Issue 7, 2008, Pages 2628-2630

  Liu, Yong Hui ^a   Wang, Xue Feng ^a   Li, Shu Shen ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; III-V SEMICONDUCTORS; OPTICAL TRANSITIONS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; STARK EFFECT;

ANALYTICAL EXPRESSIONS; BLUE SHIFT; ELECTRON AND HOLE ENERGIES; GAN QUANTUM DOTS; HOLE ENERGY LEVEL; LATERAL ELECTRIC FIELD; OPTICAL TRANSITION ENERGIES; POLARIZATION FIELD; QUANTUM-CONFINED STARK EFFECT; RED SHIFT;

NANOCRYSTALS;

EID: 46749087089     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/25/7/081     Document Type: Article

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