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Volumn 37, Issue 4, 2007, Pages 405-414
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Resonant microcavity enhanced infrared photodetectors
a a b |
Author keywords
Design; III V and II VI semiconductors; Modeling; Optoelectronic device characterization
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Indexed keywords
CHEMICAL BEAM EPITAXY;
CHEMICAL VAPOR DEPOSITION;
CRYSTAL GROWTH;
DETECTORS;
EPITAXIAL GROWTH;
INFRARED DETECTORS;
METALLIZING;
MOLECULAR BEAMS;
MOLECULAR DYNAMICS;
OPTICAL DESIGN;
OPTOELECTRONIC DEVICES;
PHOTODETECTORS;
RADIATION DETECTORS;
STANDARDS;
DETECTOR STRUCTURES;
HIGH QUANTUM EFFICIENCIES;
INDUSTRY STANDARDS;
INFRARED PHOTO DETECTORS;
METALOORGANIC CHEMICAL VAPOR DEPOSITION;
MICROCAVITY (MC);
OPTIMIZED DEVICES;
RADIATION DETECTION;
RCE DETECTORS;
RESONANT-CAVITY-ENHANCED (RCE);
MOLECULAR BEAM EPITAXY;
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EID: 46649121027
PISSN: 00785466
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (4)
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References (8)
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