Temperature dependent vibrational spectra and bond dynamics in hydrogenated amorphous silicon

Journal of Applied Physics

Volumn 103, Issue 12, 2008, Pages

  Kupchak, I M ^a,b   Gaspari, F ^a   Shkrebtii, A I ^a   Perz, J M ^a  

^a UNIVERSITY OF ONTARIO INSTITUTE OF TECHNOLOGY   (Canada)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; DYNAMICS; HYDROGEN; HYDROGENATION; HYDROGENOLYSIS; MOLECULAR DYNAMICS; MOLECULAR SPECTROSCOPY; PASSIVATION; QUANTUM CHEMISTRY; REACTION KINETICS; SIGNAL PROCESSING; SILICON; STABILITY; SYSTEM STABILITY; VIBRATIONAL SPECTRA;

(100) SILICON; AB INITIO MOLECULAR DYNAMICS (AIMD); AMERICAN INSTITUTE OF PHYSICS (AIP); ATOMIC DYNAMICS; BONDING GEOMETRIES; COMPUTER VISUALIZATION; GENERAL (CO); HYDROGEN MIGRATION; HYDROGENATED AMORPHOUS SILICON (A-SI:H); MICROSCOPIC CHARACTERISTICS; SIGNAL PROCESSING TECHNIQUE; SILICON DANGLING BONDS; SPECTRA (CO); STAEBLER WRONSKI EFFECT (SWE); STRUCTURAL STABILITIES; TEMPERATURE DEPENDENT; VIBRATIONAL PROPERTIES;

AMORPHOUS SILICON;

EID: 46449093945     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2946454     Document Type: Article

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