Precise determination of surface Debye-temperature of Si(1 1 1)-7 × 7 surface by reflection high-energy positron diffraction

Applied Surface Science

Volumn 237, Issue 1-4, 2004, Pages 29-33

  Fukaya, Y ^a   Kawasuso, A ^a   Hayashi, K ^a   Ichimiya, A ^a,b  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

Reflection high energy positron diffraction (RHEPD); Silicon; Surface Debye temperature; Total reflection

Indexed keywords

ELECTRON DIFFRACTION; ELECTROSTATICS; POSITRONS; THERMAL EFFECTS; THERMOMETERS; VIBRATIONS (MECHANICAL);

REFLECTION HIGH ENERGY POSITRON DIFFRACTION (RHEPD); SURFACE DEBYE TEMPERATURE; TOTAL REFLECTION;

SURFACE CHEMISTRY;

EID: 4644363190     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(04)01006-2     Document Type: Conference Paper

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