The effect of electron bombardment on optical properties of n-type silicon

Applied Surface Science

Volumn 237, Issue 1-4, 2004, Pages 161-164

  Sari, Amir H ^a   Osman, F ^b   Ghoranneviss, M ^a   Hora, H ^c,d   Hopfl R ^d   Hantehzadeh, M R ^a  

^a ISLAMIC AZAD UNIVERSITY   (Iran)

^b UNIVERSITY OF WESTERN SYDNEY   (Australia)

^c UNIVERSITY OF NEW SOUTH WALES   (Australia)

^d Deggendorf University of Applied Science   (Germany)

Author keywords

Electron bombardment; N type silicon; Optical properties

Indexed keywords

DOSIMETERS; ELECTRON BEAMS; ELECTRON GUNS; HELIUM; OPTICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS; SPECTROPHOTOMETERS; TRANSISTORS; ULTRAVIOLET RADIATION;

ELECTRON BEAM GUN; ELECTRON BEAM INTENSITY; ELECTRON BOMBARDMENT; N-TYPE SILICON; POLAR TRANSISTORS;

SILICON;

EID: 4644294042     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.06.119     Document Type: Conference Paper

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