Theoretical study of characteristics of a molecular single-electron transistor

Thin Solid Films

Volumn 464-465, Issue , 2004, Pages 445-451

  Shorokhov, V V ^a   Soldatov, E S ^a   Snigirev, O V ^a  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

Energy relaxations; Energy spectrum; Molecular single electron transistor

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRON DEVICES; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; ELECTROSTATICS; GIBBS FREE ENERGY; KINETIC ENERGY; PROBABILITY DENSITY FUNCTION; QUANTUM THEORY; RELAXATION PROCESSES;

COULOMB ENERGY; ENERGY RELAXATIONS; ENERGY SPECTRUM; MOLECULAR SINGLE-ELECTRON TRANSISTORS;

TRANSISTORS;

EID: 4644226331     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.06.070     Document Type: Article

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