SCOPUS 정보 검색 플랫폼

Volumn 10, Issue , 2008, Pages

Cavity-enhanced radiative emission rate in a single-photon-emitting diode operating at 0.5GHz

(6) Ellis, David J P a Bennett, Anthony J a Dewhurst, Samuel J a,b Nicoll, Christine A b Ritchie, David A b Shields, Andrew J a

a TOSHIBA CORPORATION (Japan)

b UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ALUMINUM CLADDING; DECAY (ORGANIC); ELECTRIC PROPERTIES; LIGHT; LIGHT METALS; QUANTUM ELECTRONICS; SEMICONDUCTOR QUANTUM DOTS;

ACTIVE AREAS; ALUMINIUM OXIDES; ELECTRICAL (ELECTRONIC) PROPERTIES; LATERAL CONFINEMENT; MICROCAVITY (MC); OPTICAL MODES; P I N DIODES; RADIATIVE DECAY RATES; RADIATIVE EMISSIONS; REPETITION RATES; SINGLE PHOTON EMITTING DIODE; SINGLE PHOTONS; SINGLE QUANTUM DOTS; WET OXIDATION (WO);

PHOTONS;

EID: 46349083788 PISSN: 13672630 EISSN: None Source Type: Journal
DOI: 10.1088/1367-2630/10/4/043035 Document Type: Article

Times cited : (58)

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